Semiconductor manufacturers Micron Technology Inc. and Intel Corp. revealed Wednesday that they are now sampling new flash memory chips designed and manufactured by their joint venture, IM Flash Technologies. The new, multi-level cell NAND flash memory components feature a microscopic, 50-nanometer process that the two companies said is ideal for ever-shrinking consumer electronic devices. The multi-level cell chips sample at a 16-gigabit die density, whereas the single-level cell products Intel and Micron are currently shipping sample at a 4Gb die density. Micron is headquartered in Boise, Idaho, and has NAND-producing facilities there and in Manassas, Va.
Top NewsThursday, April 26, 2007
Micron, Intel Now Sampling New Flash Chips